Product Summary

The si2305ds-t1-e3 is a P-Channel 1.25-W, 1.8-V (G-S) MOSFET.

Parametrics

si2305ds-t1-e3 absolute maximum ratings: (1)Drain-Source Voltage VDS: - 8V; (2)Gate-Source Voltage VGS: ± 8V; (3)Continuous Drain Current (TJ = 150℃) TA = 25℃ ID: ± 3.5A; (4)Pulsed Drain Current IDM: ± 12A; (5)Continuous Source Current (Diode Conduction)a, b IS - 1.6A; (6)Maximum Power Dissipationa, b TA = 25℃ PD: 1.25W; (7)Operating Junction and Storage Temperature Range TJ, Tstg: - 55 to 150℃.

Features

si2305ds-t1-e3 features: (1)Halogen-free According to IEC 61249-2-21 Available; (2)TrenchFET Power MOSFETs: 1.8 V Rated.

Diagrams

si2305ds-t1-e3 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
SI2305DS-T1-E3
SI2305DS-T1-E3
Vishay/Siliconix
MOSFET 8V 3.5A 1.25W
Data Sheet
0-1: $0.38
1-10: $0.26
10-100: $0.22
100-250: $0.19
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
SI2300DS-T1-GE3
SI2300DS-T1-GE3
Vishay/Siliconix
MOSFET 30V 3.6A N-CH MOSFET
Data Sheet
0-1: $0.29
1-25: $0.20
25-100: $0.17
100-250: $0.14
SI2302CDS-T1-E3
SI2302CDS-T1-E3
Vishay/Siliconix
MOSFET 20V 2.9A 0.86W 57mohm @ 4.5V
Data Sheet
0-1: $0.09
1-10: $0.08
10-100: $0.08
100-250: $0.08
SI2302CDS-T1-GE3
SI2302CDS-T1-GE3
Vishay/Siliconix
MOSFET 20V 2.9A 0.86W 57mohm @ 4.5V
Data Sheet
0-1: $0.30
1-10: $0.20
10-100: $0.16
100-250: $0.13
SI2303CDS-T1-GE3
SI2303CDS-T1-GE3
Vishay/Siliconix
MOSFET 30V 2.7A 2.3W 190 mohms @ 10V
Data Sheet
0-1: $0.30
1-10: $0.20
10-100: $0.16
100-250: $0.13
SI2301CDS-T1-GE3
SI2301CDS-T1-GE3
Vishay/Siliconix
MOSFET 20V 3.1A 1.6W 112 mohms @ 4.5V
Data Sheet
0-1: $0.28
1-10: $0.18
10-100: $0.17
100-250: $0.15
Si2303CDS-T1-E3
Si2303CDS-T1-E3
Vishay/Siliconix
MOSFET 30V 2.7A 2.3W 190mohm @ 10V
Data Sheet
0-1: $0.30
1-10: $0.20
10-100: $0.16
100-250: $0.13