Product Summary

The SI1417EDH is a P-channel 12-V (D-S) MOSFET.

Parametrics

SI1417EDH absolute maximum ratings: (1)Drain-source voltage, VDS: -12V; (2)Gate-source voltage, VGS: 12V; (3)Continuous drain current (TJ = 150C), TA = 25℃: -3.3 to -2.7 A; TA = 85℃: -2.4 to -1.9 A; (4)Pulsed drain current, IDM: -8A; (5)Continuous diode current (diode conduction), IS: -1.4 to -0.9A; (6)Maximum power dissipation, TA = 85℃, PD: 0.81 to 0.52W; (7)Operating junction and storage temperature range, TJ, Tstg: -55 to 150 ℃.

Features

SI1417EDH features: (1)TrenchFET power MOSFETS: 1.8-V rated; (2)ESD protected: 3000 V; (3)Thermally enhanced SC-70 package.

Diagrams

SI1417EDH pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
Si1417EDH
Si1417EDH
Other

Data Sheet
Negotiable 
SI1417EDH-T1
SI1417EDH-T1
Vishay/Siliconix
MOSFET 12V 3.3A 1.56W 85 mohms @ 4.5V
Data Sheet
Negotiable 
SI1417EDH-T1-E3
SI1417EDH-T1-E3
Vishay/Siliconix
MOSFET 12V 3.3A 1.56W 85 mohms @ 4.5V
Data Sheet
0-1: $0.40
1-10: $0.29
10-100: $0.27
100-250: $0.23
SI1417EDH-T1-GE3
SI1417EDH-T1-GE3

MOSFET P-CH 12V SC-70-6
Data Sheet
0-1: $0.40
1-25: $0.31
25-100: $0.27
100-250: $0.23
250-500: $0.20
500-1000: $0.16