(China (Mainland))
Product Summary
The SI1905DL-T1 is a dual P-channel 1.8-V (G-S) MOSFET.
Parametrics
SI1905DL-T1 absolute maximum ratings: (1)Drain-Source voltage VDS: –8 V; (2)Gate-Source voltage VGS: ±8 V; (3)Continuous drain current (TJ = 150 ℃), TA = 25 ℃ ID: ±0.60 A;TA = 85 ℃ ID: ±0.43 A; (4)Pulsed drain current IDM: ±1.0 A; (5)Continuous diode current (Diode conduction)a IS: –0.25 A; (6)Maximum power dissipation, TA = 25 ℃ PD: 0.30 W; TA = 85 ℃: 0.16 W; (7)Operating junction and storage temperature range TJ, Tstg: –55 to 150 ℃.
Features
SI1905DL-T1 features: (1)VDS: -8 V; (2)rDS(on): 0.600 Ω @ VGS = –4.5 V; 0.850 Ω @ VGS = –2.5 V; 1.200 Ω @ VGS = –1.8 V; (3)ID: ±0.60 A @ VGS = -4.5 V; ±0.50 A @ VGS = -2.5 V; ±0.42 A @ VGS = -1.8 V.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 SI1905DL-T1 |
Vishay/Siliconix |
MOSFET 8V 0.6A |
Data Sheet |
Negotiable |
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SI1905DL-T1-E3 |
Vishay/Siliconix |
MOSFET 8V 0.6A |
Data Sheet |
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