(China (Mainland))
Product Summary
The ntd60n02rt4g is a Power MOSFET.
Parametrics
ntd60n02rt4g absolute maximum ratings: (1)Drain-to-Source Voltage: 24 V; (2)Gate-to-Source Voltage - Continuous: ±20 V; (3)Thermal Resistance Junction-to-Case: 2.6 ℃/W; (4)Total Power Dissipation: 58 W; (5)Drain Current: 62 A; (6)Thermal Resistance Junction-to-Ambient: 80 ℃/W; (7)Total Power Dissipation: 1.87 W; (8)Drain Current - Continuous: 10.5 A; (9)Operating and Storage Temperature: -55 to 175 ℃.
Features
ntd60n02rt4g features: (1)Planar HD3e Process for Fast Switching Performance; (2)Low RDS(on) to Minimize Conduction Loss; (3)Low Ciss to Minimize Driver Loss; (4)Low Gate Charge; (5)Optimized for High Side Switching Requirements in High-Efficiency DC-DC Converters; (6)Pb-Free Packages are Available.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 NTD60N02RT4G |
ON Semiconductor |
MOSFET 25V 62A N-Channel |
Data Sheet |
Negotiable |
|
||||||||||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
|
NTD60N02R-001 |
ON Semiconductor |
MOSFET 25V 62A N-Channel |
Data Sheet |
Negotiable |
|
||||||||||||
|
NTD60N02R-035 |
ON Semiconductor |
MOSFET 25V 62A N-Channel |
Data Sheet |
Negotiable |
|
||||||||||||
|
NTD60N02R-1G |
ON Semiconductor |
MOSFET 25V 62A N-Channel |
Data Sheet |
Negotiable |
|
||||||||||||
|
NTD60N02RG |
ON Semiconductor |
MOSFET 25V 62A N-Channel |
Data Sheet |
Negotiable |
|
||||||||||||
|
NTD60N02RT4G |
ON Semiconductor |
MOSFET 25V 62A N-Channel |
Data Sheet |
Negotiable |
|
||||||||||||
|
NTD6416ANL-1G |
ON Semiconductor |
MOSFET NFET DPAK 100V 15A 86MOHM |
Data Sheet |
|
|
||||||||||||
