MBRA130LT3G

mbra130lt3g, metal–to–silicon power rectifier, 30 v, 25 a, 100 khz, sop

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Price:: US $0.09~0.09 / piece [Get Latest Price]

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Qty (lots)	Price/lot
1 ~ 15000 :	0.09 / Piece

PartNumber:: MBRA130LT3G

Brand:: ON Semiconductor - ON | D/C: 06+

Availability:: Supply Ability: 15000/Month Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-07-25

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Part Number:MBRA130LT3G
US $0.09 - 0.09
Quantity:

piece

Product Summary

The mbra130lt3g is a kind of metal–to–silicon power rectifier employing the Schottky Barrier principle. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes.

Parametrics

mbra130lt3g absolute maximum ratings: (1)Peak Repetitive Reverse Voltage, Working Peak Reverse Voltage, DC Blocking Voltage: 30 V; (2)Average Rectified Forward Current (At Rated VR, TC = 105°C)IO: 1.0 A; (3)Peak Repetitive Forward Current (At Rated VR, Square Wave, 100 kHz, TC = 105°C)IFRM: 2.0 A; (4)Non-Repetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz)IFSM: 25 A; (5)Storage/Operating Case Temperature Tstg, TC: –55 to +150 °C; (6)Operating Junction Temperature TJ: –55 to +125 °C; (7)Voltage Rate of Change (Rated VR, TJ = 25°C)dv/dt: 10,000 V/ms.

Features

mbra130lt3g features: (1)Compact Package with J–Bend Leads Ideal for Automated Handling; (2)Highly Stable Oxide Passivated Junction; (3)Guardring for Over–Voltage Protection; (4)Low Forward Voltage Drop.