Product Summary

The mbra130lt3g is a kind of metal–to–silicon power rectifier employing the Schottky Barrier principle. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes.

Parametrics

mbra130lt3g absolute maximum ratings: (1)Peak Repetitive Reverse Voltage, Working Peak Reverse Voltage, DC Blocking Voltage: 30 V; (2)Average Rectified Forward Current (At Rated VR, TC = 105°C)IO: 1.0 A; (3)Peak Repetitive Forward Current (At Rated VR, Square Wave, 100 kHz, TC = 105°C)IFRM: 2.0 A; (4)Non-Repetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz)IFSM: 25 A; (5)Storage/Operating Case Temperature Tstg, TC: –55 to +150 °C; (6)Operating Junction Temperature TJ: –55 to +125 °C; (7)Voltage Rate of Change (Rated VR, TJ = 25°C)dv/dt: 10,000 V/ms.

Features

mbra130lt3g features: (1)Compact Package with J–Bend Leads Ideal for Automated Handling; (2)Highly Stable Oxide Passivated Junction; (3)Guardring for Over–Voltage Protection; (4)Low Forward Voltage Drop.

Diagrams

mbra130lt3g circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MBRA130LT3G
MBRA130LT3G

ON Semiconductor

Schottky (Diodes & Rectifiers) 1A 30V

Data Sheet

0-1: $0.26
1-25: $0.17
25-100: $0.13
100-500: $0.09
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MBRA100
MBRA100

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Data Sheet

0-1: $0.35
1-25: $0.23
25-100: $0.15
100-500: $0.13
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Data Sheet

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