(China (Mainland))
Product Summary
The IRLML6302TRPBF is a Power MOSFET. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Parametrics
IRLML6302TRPBF absolute maximum ratings: (1)Continuous Drain Current: -0.78 A; (2)Power Dissipation: 540 mW; (3)Linear Derating Factor: 4.3 mW/℃; (4)Gate-to-Source Voltage: ±12 V; (5)Junction and Storage Temperature Range: -55 to +150 ℃.
Features
IRLML6302TRPBF features: (1) Generation V Technology; (2) Ultra Low On-Resistance; (3)P-Channel MOSFET; (4)SOT-23 Footprint; (5)Low Profile ( < 1.1 mm); (6)Available in Tape and Reel; (7)Fast Switching; (8)Lead-Free.
Diagrams
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 IRLML6302TRPBF |
International Rectifier |
MOSFET MOSFT P-Ch -0.62A 600mOhm 2.4nC LogLvl |
Data Sheet |
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