Product Summary
The irfl110trpbf is a third generation power MOSFET from Vishay which provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package of irfl110trpbf is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of greater than 1.25 W is possible in a typical surface mount application.
Parametrics
irfl110trpbf absolute maximum ratings: (1)Drain-Source Voltage VDS: 100V; (2)Gate-Source Voltage VGS: ±20V;(3)Continuous Drain Current, VGS @ 10V, ID @ TC = 25℃: 1.5A; (4)Continuous Drain Current, VGS @ 10V, ID @ TC = 100℃: 0.96A; (5) Pulsed Drain Current. IDM: 12A; (6)Junction & Storage Temperature Range TJ, TSTG: –55 to 150℃.
Features
irfl110trpbf features: (1)Surface Mount; (2)Available in Tape and Reel; (3)Dynamic dV/dt Rating; (4)Repetitive Avalanche Rated; (5)Fast Switching; (6)Ease of Paralleling; (7)Simple Drive Requirements.
Diagrams

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![]() IRFL110TRPBF |
![]() Vishay/Siliconix |
![]() MOSFET N-Chan 100V 1.5 Amp |
![]() Data Sheet |
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![]() IRFL014 |
![]() Vishay/Siliconix |
![]() MOSFET N-Chan 60V 2.7 Amp |
![]() Data Sheet |
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![]() IRFL014, SiHFL014 |
![]() Other |
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![]() Negotiable |
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![]() IRFL014N |
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![]() MOSFET N-CH 55V 1.9A SOT223 |
![]() Data Sheet |
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![]() IRFL014NPBF |
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![]() MOSFET |
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![]() IRFL014NTR |
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![]() MOSFET N-CH 55V 1.9A SOT223 |
![]() Data Sheet |
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![]() IRFL014NTRPBF |
![]() International Rectifier |
![]() MOSFET MOSFT 55V 1.9A 160mOhm 7nC |
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(China (Mainland))











