Product Summary
The SI4892 is an N-channel mosfet.
Parametrics
SI4892 absolute maximum ratings: (1)Drain-Source Voltage VDS: 30 V; (2)Gate-Source Voltage VGS: 20V; (3)Continuous Drain Current (TJ = 150°C)TA = 25°C ID: 12.4A, TA = 70°C: 9.9A; (4)Pulsed Drain Current IDM: 50 A; (5)Continuous Source Current (Diode Conduction)a IS: 2.60A; (6)Avalanche Current L = 0 1 mH IAS: 20A; (7)Single-Pulse Avalanche Energy 0.1 EAS: 20 mJ; (8)Maximum Power Dissipationa TA = 25°C PD: 3.1 W; (9)Operating Junction and Storage Temperature Range TJ, Tstg: -55 to 150°C.
Features
SI4892 features: (1)TrenchFET Power MOSFET; (2)High Efficiency PWM Optimized; (3)100% Rg Tested; (4)100% UIS Tested.
Diagrams
Image | Part No | Mfg | Description | ![]() |
Pricing (USD) |
Quantity | ||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
![]() SI4892DY |
![]() Vishay/Siliconix |
![]() MOSFET 30V 12.4A 3.1W |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() SI4892DY-T1-E3 |
![]() Vishay/Siliconix |
![]() MOSFET 30 Volt 12.4A 3.1W |
![]() Data Sheet |
![]()
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![]() |
![]() SI4892DY-T1-GE3 |
![]() Vishay/Siliconix |
![]() MOSFET 30V 12.4A 3.1W 12mohm @ 10V |
![]() Data Sheet |
![]()
|
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![]() |
![]() SI4892DY-T1 |
![]() Vishay/Siliconix |
![]() MOSFET 30V 12.4A 1.6W |
![]() Data Sheet |
![]() Negotiable |
|
||||||||||||
![]() |
![]() SI4892DY-E3 |
![]() Vishay/Siliconix |
![]() MOSFET 30V 12.4A 3.1W |
![]() Data Sheet |
![]() Negotiable |
|