Product Summary
The irf7604tr is a Fifth HEXFET power MOSFET from International Rectifier which utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that irf7604tr is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Parametrics
irf7604tr absolute maximum ratings: (1)ID @ TA = 25℃ Continuous Drain Current, VGS @ -4.5V: -3.6A; (2)ID @ TA = 70℃ Continuous Drain Current, VGS @ -4.5V: -2.9A; (3)IDM Pulsed Drain Current: -19A; (4)PD @TA = 25℃ Power Dissipation: 1.8W; (5)Linear Derating Factor: 14 mW/℃; (6)VGS Gate-to-Source Voltage: ± 12 V; (7)dv/dt Peak Diode Recovery dv/dt: -5.0 V/ns; (8)TJ, TSTG Junction and Storage Temperature Range: -55 to +150 ℃.
Features
irf7604tr features: (1)Generation V Technology; (2)Ultra Low On-Resistance; (3)P-ChanneMOSFET; (4)Very SmalSOIC Package; (5)Low Profile (<1.1mm); (6)Available in Tape & Reel; (7)Fast Switching.
Diagrams
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![]() IRF7604TR |
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![]() MOSFET P-CH 20V 3.6A MICRO8 |
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![]() Negotiable |
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![]() IRF7604TRPBF |
![]() International Rectifier |
![]() MOSFET MOSFT PCh -20V -3.6A 90mOhm 13nC Micro 8 |
![]() Data Sheet |
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