(China (Mainland))
Product Summary
The HN2S01FU is a Silicon epitaxial schottky barrier.
Parametrics
HN2S01FU absolute maximum ratings: (1)Maximum (Peak) Reverse Voltage: 15 V; (2)Reverse Voltage: 10 V; (3)Maximum (Peak) Forward Current: 200 mA; (4)Average Forward Current: 100 mA; (5)Surge Current: 1 A; (6)Power Dissipation: 200 mW; (7)Junction Temperature: 125 ℃; (8)Storage Temperature Range: -55 to 125 ℃; (9)Operating Temperature Range: -40 to 100 ℃.
Features
HN2S01FU features: (1)HN2S01F is composed of 3 independent diodes; (2)Low Forward Voltage : VF=0.23V(TYP.)@IF=5mA.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 HN2S01FU |
Other |
|
Data Sheet |
Negotiable |
|
||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
|
HN2S01F |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
HN2S01FU |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
HN2S02FU |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
HN2S02JE |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
HN2S03FE |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
HN2S03FU |
Other |
|
Data Sheet |
Negotiable |
|
||||
