(China (Mainland))
Product Summary
The cph3313-tl-e is a P-Channel Silicon MOSFET.
Parametrics
cph3313-tl-e absolute maximum ratings: (1)Drain-to-Source Voltage VDSS: -20 V; (2)Gate-to-Source Voltage VGSS: ±10 V; (3)Drain Current (DC) ID: -1.6 A; (4)Drain Current (Pulse) IDP: -6.4 A; (5)Allowable Power Dissipation PD Mounted on a ceramic board (900mm250.8mm): 1 W; (6)Channel Temperature Tch: 150℃; (7)Storage Temperature Tstg: -55 to +150℃.
Features
cph3313-tl-e features: (1)Low ON-resistance; (2)Ultrahigh-speed switching; (3)2.5V drive.
Diagrams
