(China (Mainland))
Product Summary
The bfp640f is an NPN Silicon Germanium RF Transistor. The bfp640f provides outstanding performance for a wide range of wireless applications. When IC = 1 mA, IB = 0, the Collector-emitter breakdown voltage of the bfp640f is 4V to 4.5V. The Storage temperature and Ambient temperature of the device are -65°C to +150°C.
Parametrics
bfp640f absolute maximum ratings: (1) Collector-emitter voltage: TA > 0°C:4V, TA ≤ 0°C:3.7V; (2) Collector-emitter voltage: 13V; (3) Collector-base voltage: 13V; (4) Emitter-base voltage: 1.2V; (5) Collector current: 50 mA; (6) Base current: 3mA; (7) Total power dissipation (TS ≤ 92°C): 200 mW; (8) Junction temperature: 150 °C; (9) Ambient temperature: -65°C to 150°C; (10) Storage temperature: -65°C to 150°C.
Features
bfp640f features: (1) High gain low noise RF transistor; (2) Provides outstanding performance for a wide range of wireless applications; (3) Ideal for CDMA and WLAN applications; (4) Outstanding noise figure F = 0.65 dB at 1.8 GHz, Outstanding noise figure F = 1.2 dB at 6 GHz; (5) High maximum stable gain:Gms = 23 dB at 1.8 GHz; (6) Gold metallization for extra high reliability; (7) 70 GHz fT-Silicon Germanium technology.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
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 BFP640F |
Other |
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Data Sheet |
Negotiable |
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BFP640FE6327 |
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TRANSISTOR NPN RF 4V TSFP-4 |
Data Sheet |
Negotiable |
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