Product Summary
The IRF7326D2 is a FETKY MOSFET and Schottky diode. The IRF7326D2 offers the designer an innovative, board space saving solution for switching regulator and power management applications. Generation 5 HEXFET Power MOSFET utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The IRF7326D2 has been modified through a customized leadframe for enhanced thermal characteristics. The IRF7326D2 package is designed for vapor phase, infrared or wave soldering techniques.
Parametrics
IRF7326D2 absolute maximum ratings: (1)Continuous drain current, ID @ TA = 25°C: -3.6 A; ID @ TA = 70°C: -2.9 A; (2)Pulsed drain current: -29 A; (3)Power dissipation, PD @TA = 25°C: 2.0 W; PD @TA = 70°C: 1.3 W; (4)Linear derating factor: 16 mW/°C; (5)Gate-to-source voltage: ± 20 V; (6)Peak diode recovery dv/dt: -5.0 V/ns; (7)Junction and storage temperature range: -55 to +150 °C; (8)Junction-to-ambient: 62.5 °C/W.
Features
IRF7326D2 features: (1)Co-packaged HEXFET power MOSFET and Schottky diode; (2)Ideafor buck regulator applications; (3)P-channeHEXFET; (4)Low VF Schottky rectifier; (5)Generation 5 technology; (6)SO-8 footprint.
Diagrams
Image | Part No | Mfg | Description | ![]() |
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![]() IRF7326D2 |
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![]() MOSFET P-CH 30V 3.6A 8-SOIC |
![]() Data Sheet |
![]() Negotiable |
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![]() IRF7326D2PBF |
![]() International Rectifier |
![]() MOSFET |
![]() Data Sheet |
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![]() IRF7326D2TRPBF |
![]() International Rectifier |
![]() MOSFET MOSFT PCh w/Schttky -3.6A 100mOhm 16.7nC |
![]() Data Sheet |
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![]() IRF7326D2TR |
![]() |
![]() MOSFET P-CH 30V 3.6A 8-SOIC |
![]() Data Sheet |
![]() Negotiable |
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