IRF7326D2

IRF7326D2, FETKY MOSFET and Schottky diode, 2.9 A, 2.0 W, 20 V, SO

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Price:: US $1.00~1.00 / piece [Get Latest Price]

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PartNumber:: IRF7326D2

Brand:: International Rectifier - IR | D/C: 05+

Availability:: Supply Ability: 4/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2013-06-20

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Part Number:IRF7326D2
US $1.00 - 1.00
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Product Summary

The IRF7326D2 is a FETKY MOSFET and Schottky diode. The IRF7326D2 offers the designer an innovative, board space saving solution for switching regulator and power management applications. Generation 5 HEXFET Power MOSFET utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The IRF7326D2 has been modified through a customized leadframe for enhanced thermal characteristics. The IRF7326D2 package is designed for vapor phase, infrared or wave soldering techniques.

Parametrics

IRF7326D2 absolute maximum ratings: (1)Continuous drain current, ID @ TA = 25°C: -3.6 A; ID @ TA = 70°C: -2.9 A; (2)Pulsed drain current: -29 A; (3)Power dissipation, PD @TA = 25°C: 2.0 W; PD @TA = 70°C: 1.3 W; (4)Linear derating factor: 16 mW/°C; (5)Gate-to-source voltage: ± 20 V; (6)Peak diode recovery dv/dt: -5.0 V/ns; (7)Junction and storage temperature range: -55 to +150 °C; (8)Junction-to-ambient: 62.5 °C/W.

Features

IRF7326D2 features: (1)Co-packaged HEXFET power MOSFET and Schottky diode; (2)Ideafor buck regulator applications; (3)P-channeHEXFET; (4)Low VF Schottky rectifier; (5)Generation 5 technology; (6)SO-8 footprint.