(China (Mainland))
Product Summary
The bfp640 is an NPN Silicon Germanium RF Transistor.
Parametrics
bfp640 absolute maximum ratings: (1)Collector-emitter voltage TA > 0 °C VCEO: 4 V; (2)Collector-emitter voltage VCES: 13 mA; (3)Collector-base voltage VCBO: 13 mA; (4)Emitter-base voltage VEBO: 1.2 mA; (5)Collector current IC: 50 mA; (6)Base current IB: 3 mA; (7)Total power dissipation1)TS ≤ 90°C Ptot: 200 mW; (8)Junction temperature Tj: 150 °C; (9)Ambient temperature TA: -65 to 150°C; (10)Storage temperature Tstg: -65 to 150°C.
Features
bfp640 features: (1)High gain low noise RF transistor; (2)Provides outstanding performance for a wide range of wireless applications; (3)Ideal for CDMA and WLAN applications; (4)Outstanding noise figure F = 0.65 dB at 1.8 GHz; Outstanding noise figure F = 1.2 dB at 6 GHz; (5)High maximum stable gain Gms = 24 dB at 1.8 GHz; (6)Gold metallization for extra high reliability; (7)70 GHz fT-Silicon Germanium technology; (8)Pb-free (RoHS compliant)package1); (9)Qualified according AEC Q101.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 BFP640FE6327 |
|
TRANSISTOR NPN RF 4V TSFP-4 |
Data Sheet |
Negotiable |
|
||||
 |
BFP640F |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
BFP640 |
Other |
|
Data Sheet |
Negotiable |
|
||||
