(China (Mainland))
Product Summary
The STS7C4F30L is a power MOSFET. The STS7C4F30L is the latest development of STMicroelectronis unique single feature size strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Parametrics
STS7C4F30L absolute maximum ratings: (1)VDS, drain-source Voltage (VGS = 0): 30 V; (2)VDGR, drain-gate voltage (RGS = 20 kW): 30 V; (3)VGS, gate- source Voltage: ± 20 V; (4)ID, drain current (continuos)at TC = 25℃ single operating: 4 A; (5)ID, drain current (continuos)at TC = 100℃ single operating: 2.5 A; (6)IDM, drain current (pulsed): 16 A; (7)Ptot, total dissipation at TC = 25℃ dual operating total dissipation at TC = 25℃ single operating: 2 W; (8)Tstg, storage temperature: -60 to 150 ℃; (9)Tj, Max. Operating junction temperature: 150 ℃.
Features
STS7C4F30L features: (1)Typical RDS(on)(N-Channel)= 0.018 W; (2)Typical RDS(on)(P-Channel)= 0.070 W; (3)Standard outline for easy automated surface mount assembly; (4)Low threshold drive.
Diagrams
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 STS7C4F30L |
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MOSFET N+P 30V 4/7A 8-SOIC |
Data Sheet |
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STS7C4F30L |
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