(China (Mainland))
Product Summary
The SI4822DY-T1 is an N-channel logic level MOSFET. The SI4822DY-T1 is produced using fairchild semiconductor advanced powertrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. The SI4822DY-T1 is well suited for low voltage and battery powered applications where low in-line power loss and fast switching is required.
Parametrics
SI4822DY-T1 absolute maximum ratings: (1)VDSS, drain-source voltage: 30 V; (2)VGSS, gate-source voltage: ±20 V; (3)ID, drain current - continuous (Note 1a): 12.5 A; - Pulsed: 50 A; (4)PD, power dissipation for single operation (Note 1a): 2.5 W; (Note 1b): 1.2 W; (Note 1c): 1 W; (5)TJ,TSTG, operating and storage temperature range: -55 to 150 °C; (6)RqJA, thermal resistance, junction-to-ambient (Note 1a): 50 °C/W; (7)RqJC, thermal resistance, junction-to-case (Note 1): 25 °C/W.
Features
SI4822DY-T1 features: (1)12.5 A, 30 V. RDS(ON)= 0.0095 W @ VGS = 10 V; RDS(ON)= 0.013 W @ VGS = 4.5 V; (2)Fast switching speed; (3)Low gate charge; (4)High performance trench technology for extremely low RDS(ON); (5)High power and current handling capability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
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 SI4822DY-T1 |
Vishay/Siliconix |
MOSFET 30V 12A 2.5W |
Data Sheet |
Negotiable |
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SI4822DY-T1-E3 |
Vishay/Siliconix |
MOSFET 30V 12A 2.5W |
Data Sheet |
Negotiable |
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