Product Summary

The IRF7704 is a HEXFET power MOSFET. The IRF7704 from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that international rectifier is well known for, provides thedesigner with an extremely efficient and reliable device for battery and load management. The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.2mm) allows the IRF7704 to fit easily into extremely thin environments such as portable electronics and PCMCIA cards.

Parametrics

IRF7704 absolute maximum ratings: (1)VDS, drain- source voltage: -40 V; (2)ID @ TA = 25°C, continuous drain current, VGS @ -10V: -4.6 A; (3)ID @ TA= 70°C, continuous drain current, VGS @ -10V: -3.7 A; (4)IDM, pulsed drain current: -19 A; (5)PD @TA = 25°C, power dissipation: 1.5 W; (6)PD @TA = 70°C, power dissipation: 1.0 W; (7)Linear derating factor: 12 mW/°C; (8)VGS, gate-to-source voltage: ± 20 V; (9)TJ, TSTG, junction and storage temperature range: -55 to + 150 °C.

Features

IRF7704 features: (1)Ultra low on-resistance; (2)P-ChanneMOSFET; (3)Very smalSOIC package; (4)Low profile (< 1.1mm); (5)Available in tape & reel.

Diagrams

IRF7704 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRF7704
IRF7704

MOSFET P-CH 40V 4.6A 8-TSSOP
Data Sheet
Negotiable 
IRF7704G
IRF7704G
Other

Data Sheet
Negotiable 
IRF7704TRPBF
IRF7704TRPBF
International Rectifier
MOSFET MOSFT PCh -40V -4.6A 46mOhm 25nC
Data Sheet
0-1: $1.13
1-25: $0.70
25-100: $0.48
100-250: $0.45
IRF7704GTRPBF
IRF7704GTRPBF
International Rectifier
MOSFET MOSFT PCh -40V -4.6A 46mOhm 25nC
Data Sheet
Negotiable 
IRF7704TR
IRF7704TR

MOSFET P-CH 40V 4.6A 8-TSSOP
Data Sheet
Negotiable