IRF7555TR

IRF7555TR, HEXFET Power MOSFET, SO-8, -20V, -34A

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Price:: US $0.40~0.40 / piece [Get Latest Price]

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Qty (lots)	Price/lot
1 ~ 100000 :	0.40 / Piece

PartNumber:: IRF7555TR

Brand:: International Rectifier - IR | D/C: 04+

Availability:: Supply Ability: 4/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-06-24

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Part Number:IRF7555TR
US $0.40 - 0.40
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Product Summary

The IRF7555TR is a new trench HEXFET power MOSFET from International Rectifier which utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRF7555TR is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Parametrics

IRF7555TR absolute maximum ratings: (1)Drain-Source Voltage VDS: -20V; (2)Gate-Source Voltage VGS: ±12V;(3)Continuous Drain Current, VGS @ -4.5V, ID @ TA = 25℃: -4.3A; (4)Continuous Drain Current, VGS @ -4.5V, ID @ TA = 70℃: -3.4A; (5) Pulsed Drain Current. IDM: -34A; (6)Junction & Storage Temperature Range TJ, TSTG: –55 to 150℃.

Features

IRF7555TR features: (1)Trench Technology; (2)Ultra Low On-Resistance; (3)Dual P-Channel MOSFET; (4)Very Small SOIC Package; (5)Low Profile (<1.1mm); (6)Available in Tape & Reel.