(China (Mainland))
Product Summary
The IRF7526D1TR is a kind of co-packaged HEXFET and Schottky diode, which offers the designer an innovative board space saving solution for switching regulator applications.The IRF7526D1TR utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications like cell phone, PDA, etc.
Parametrics
IRF7526D1TR absolute maximum ratings: (1)Gate-Source Voltage VGS: ±20V; (2)Continuous Drain Current, VGS @ -4.5V, ID @ TA = 25℃ : -2.0A; (3)Continuous Drain Current, VGS @ -4.5V, ID @ TA = 70℃ : -1.6A; (4) Pulsed Drain Current. IDM: -16A; (5)Power Dissipation 25℃ PD: 1.25W; 70℃: 0.8W; (6)Junction & Storage Temperature Range TJ, TSTG: –55 to 150℃.
Features
IRF7526D1TR features: (1)Co-packaged HEXFET Power MOSFET and Schottky Diode; (2)P-Channel HEXFET; (3)Low VF Schottky Rectifier; (4)Generation 5 Technology; (5)Micro8 Footprint; (6)Lead-Free.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 IRF7526D1TR |
|
MOSFET P-CH 30V 2A MICRO8 |
Data Sheet |
Negotiable |
|
||||||||||||
 |
IRF7526D1TRPBF |
International Rectifier |
MOSFET MOSFT PCh w/Schttky -2A 200mOhm 7.5nC |
Data Sheet |
|
|
||||||||||||
