IRF7402TR

IRF7402TR, HEXFET Power MOSFET, SO-8, ±12 V, 54A, International Rectifier

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Price:: US $0.40~0.40 / piece [Get Latest Price]

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1 ~ 10000 :	0.40 / Piece

PartNumber:: IRF7402TR

Brand:: International Rectifier - IR | D/C: 05+

Availability:: Supply Ability: 4/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2013-06-24

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Part Number:IRF7402TR
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Product Summary

The IRF7402TR is a HEXFET Power MOSFET. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized the IRF7402TR design that HEXFET Power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple device can be used in an application with dramatically reduced board space. The package of the IRF7402TR is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.

Parametrics

IRF7402TR absolute maximum ratings: (1)ID @ TA = 25℃ Continuous Drain Current, VGS @ 4.5V: 6.8A; (2)ID @ TA = 70℃ Continuous Drain Current, VGS @ 4.5V: 5.4A; (3)IDM Pulsed Drain Current: 54A; (4)PD @TA = 25℃ Power Dissipation: 2.5W; (5)Linear Derating Factor: 0.02 mW/℃; (6)VGS Gate-to-Source Voltage: ± 12 V; (7)dv/dt Peak Diode Recovery dv/dt: 5.0 V/ns; (8)TJ, TSTG Junction and Storage Temperature Range: -55 to +150 ℃.

Features

IRF7402TR features: (1)Generation V Technology; (2)Ultra Low On-Resistance; (3)P-Channel Mosfet; (4)Surface Mount; (5)Available in Tape & Reel; (6)Dynamic dv/dt Rating; (7)Fast Switching.