(China (Mainland))
Product Summary
The IRF7389TR is a Fifth Generation HEXFET from International Rectifier which utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that IRF7389TR is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Parametrics
IRF7389TR absolute maximum ratings: (1)Drain-Source Voltage VDS: -30V; (2)Gate-Source Voltage VGS: ±20V;(3)Continuous Drain Current, ID @ TA = 25℃ : -5.3A; (4)Continuous Drain Current,ID @ TA = 70℃ : -4.2A; (5) Pulsed Drain Current. IDM: -30A; (6)Junction & Storage Temperature Range TJ, TSTG: –55 to 150℃.
Features
IRF7389TR features: (1)Generation V Technology; (2)Ultra Low On-Resistance; (3)Complimentary Half Bridge; (4)Surface Mount; (5)Fully Avalanche Rated.
Diagrams
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 IRF7389TR |
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MOSFET N+P 30V 5.3A 8-SOIC |
Data Sheet |
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IRF7389TRPBF |
International Rectifier |
MOSFET MOSFT DUAL N/PCh 30V 7.3A |
Data Sheet |
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