Product Summary
The FDS6690A is an N-channel logic level MOSFET, which is produced using fairchild semiconductor advanced powertrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. The FDS6690A is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Parametrics
FDS6690A absolute maximum ratings: (1)Drain-source voltage: 30 V; (2)Gate-source voltage: ±20 V; (3)Drain current continuous: 11 A, pulsed: 50 A; (4)Power dissipation for single operation PD: 2.5 W, 1.0 W; (5)single pulse avalanche energy: 96 mJ; (6)Operating and storage junction temperature range: –55 to +150 ℃.
Features
FDS6690A features: (1)11 A, 30 V. RDS(ON) = 12.5 mW @ VGS = 10 V, RDS(ON) = 17.0 mW @ VGS = 4.5 V; (2)Fast switching speed; (3)Low gate charge; (4)High performance trench technology for extremely low RDS(ON); (5)High power and current handling capability.
Diagrams
Image | Part No | Mfg | Description | ![]() |
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![]() FDS6690A |
![]() Fairchild Semiconductor |
![]() MOSFET SO-8 SGL N-CH 30V |
![]() Data Sheet |
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![]() FDS6690A_Q |
![]() Fairchild Semiconductor |
![]() MOSFET SO-8 SGL N-CH 30V |
![]() Data Sheet |
![]() Negotiable |
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![]() FDS6690AS |
![]() Fairchild Semiconductor |
![]() MOSFET 30V NCH POWER TRENCH SYNCFET |
![]() Data Sheet |
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![]() FDS6690AS_NBNU001 |
![]() Fairchild Semiconductor |
![]() MOSFET 30V N-Ch PowerTrench |
![]() Data Sheet |
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