(China (Mainland))
Product Summary
The 2sd2537t100v is a Medium Power Transistor.
Parametrics
2sd2537t100v absolute maximum ratings: (1)Collector-base voltage: 30 V; (2)Collector-emitter voltage: 25 V; (3)Emitter-base voltage: 12 V; (4)Collector current: 1.2 A; (5)Collector power dissipation: 0.5 W; (6)Junction temperature: 150 ℃; (7)Storage temperature: -55 to +150 ℃.
Features
2sd2537t100v features: (1)High DC current gain; (2)High emitter-base voltage (VEBO=12V); (3)Low saturation voltage.
Diagrams
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 2SD2537T100V |
ROHM Semiconductor |
Transistors Bipolar (BJT) NPN 25V 1.2A |
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