Product Summary
The 2sc2873-y is a kind of Silicon NPN Epitaxial Type Transistor for Power Amplifier and Power Switching Applications.
Parametrics
2sc2873-y absolute maximum ratings: (1)Collector-to-Base Voltage, VCBO: 50 V; (2)Collector-to-Emitter Voltage, VCEO: 50 V; (3)Emitter-to-Base Voltage, VEBO: 5 V; (4)Collector Current, IC: 2 A; (5)Base Current, IB: 0.4 A; (6)Collector Dissipation, PC: 500 mW; (7)Junction Temperature, Tj: 150℃; (8)Storage Temperature, Tstg: -55 to +150℃.
Features
2sc2873-y features: (1)Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A); (2)High-speed switching time: tstg = 1.0 us (typ.); (3)Small flat package; (4)PC = 1.0 to 2.0 W (mounted on a ceramic substrate); (5)Complementary to 2SA1213.
Diagrams
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2SC2873-Y |
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2SC2000 |
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2SC2001 |
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2SC2002 |
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2SC2003 |
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2SC2020 |
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2SC2021 |
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