KM29U128T

KM29U128T, NAND Flash Memory, 4.6 V, 5 mA, 50 ns, TSSOP

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Price:: US $5.70~5.70 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 200 :	5.70 / Piece

PartNumber:: KM29U128T

Brand:: Samsung semiconductor - SAMSUNG | Pack: TSSOP | D/C: 04+

Availability:: Supply Ability: 100/Month Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-07-11

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Part Number:KM29U128T
US $5.70 - 5.70
Quantity:

piece

Product Summary

The KM29U128T is a 16M(16,777,216)x8bit NAND Flash Memory with a spare 512K(524,288)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 528-byte page in typically 200ms and an erase operation can be performed in typically 2ms on a 16K-byte block. Data in the page can be read out at 50ns cycle time per byte.

Parametrics

KM29U128T absolute maximum ratings: (1)Voltage on any pin relative to VSS VIN: -0.6 to + 4.6 V; (2)Voltage on any pin relative to VSS VCC: -0.6 to + 4.6 V; (3)Temperature Under Bias: -10 to +125 °C; (4)Storage Temperature TSTG: -65 to +150 °C; (5)Short Circuit Output Current IOS: 5 mA.

Features

KM29U128T features: (1)Voltage supply : 2.7V~3.6V; (2)Organization - Memory Cell Array : (16M + 512K)bit x 8bit; Data Register : (512 + 16)bit x8bit; (3)Automatic Program and Erase - Page Program : (512 + 16)Byte; Block Erase : (16K + 512)Byte; (4)528-Byte Page Read Operation - Random Access : 10ms(Max.); Serial Page Access : 50ns(Min.); (5)Fast Write Cycle Time - Program time : 200ms(typ.); Block Erase time : 2ms(typ.); (6)Command/Address/Data Multiplexed I/O port; (7)Hardware Data Protection - Program/Erase Lockout During Power Transitions; (8)Reliable CMOS Floating-Gate Technology - Endurance : 1M Program/Erase Cycles; Data Retention : 10 years; (9)Command Register Operation; (10)Package : 48 - pin TSOP Type1 - 12 x 20 / 0.5 mm pitch.