ILD217T

phototransistor, 30mA, 6V, SOIC

Rated 5 Rating 5 | reviews | Write a review

Price:: US $0.41~0.41 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 530 :	0.41 / Piece

PartNumber:: ILD217T

Brand:: InterFET Corporation - InterFET | Pack: SOIC | D/C: 01+

Availability:: Supply Ability: 100/Month Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-07-03

From Other Seller

Part Number:ILD217T
US $0.41 - 0.41
Quantity:

piece

Product Summary

The ILD217T is optically coupled pairs with a Gallium Arsenide infrared LED and a silicon NPN phototransistor. The ILD217T comes in a standard SOIC-8A small outline package for surface mounting which makes the ILD217T ideally suited for high density applications with limited space.

Parametrics

ILD217T absolute maximum ratings: (1) Peak reverse voltage VR: 6V; (2) Peak pulsed current: 1.0A; (3) Continuous forward current per channel: 30mA; (4) Power dissipation Pdiss: 50mW; (5) Derate linearly from 25°C: 0.66mW/°C; (6) Collector-emitter breakdown voltage BVCEO: 70V; (7) Storage temperature: -50 to +100°C; (8) Operating temperature: -50 to +100°C.

Features

ILD217T features: (1) Two Channel Coupler; (2) SOIC-8A Surface Mountable Package; (3) Standard Lead Spacing of .05 inch; (4) Available only on Tape and Reel Option (Conforms to EIA Standard 481-2) ; (5) Isolation Test Voltage, 3000 VRMS; (6) Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering; (7) Lead-free component; (8) Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC.