(China (Mainland))
Product Summary
The FDS4935A is a dual 30V P-Channel power trench MOSFET. This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor advanced PowerTrench process. The FDS4935A has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 20V). Applications are (1)Power management; (2)Load switch; (3)Battery protection.
Parametrics
FDS4935A absolute maximum ratings: (1)Drain-Source Voltage: –30 V; (2)Gate-Source Voltage: ±20 V; (3)Drain Current – Continuous (Note 1a): –7 A; (4)Drain Current – Pulsed: –30 W; (5)Power Dissipation for Dual Operation: 2 W; (6)Power Dissipation for Single Operation (Note 1a): 1.6 W; (7)Power Dissipation for Single Operation (Note 1b): 1 W; (8)Power Dissipation for Single Operation (Note 1c): 0.9 W; (9)Operating and Storage Junction Temperature Range: –55 to +175 °C.
Features
FDS4935A features: (1)–7 A, –30 V RDS(ON)= 23 mΩ @ VGS = –10 V; (2)-7 A, -30 V RDS(ON)= 35 mΩ @ VGS = –4.5 V; (3)Low gate charge (15nC typical); (4)Fast switching speed; (5)High performance trench technology for extremely low RDS(ON); (6)High power and current handling capability.
Diagrams
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 FDS4935A |
Fairchild Semiconductor |
MOSFET -30V Dual |
Data Sheet |
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FDS4935A_Q |
Fairchild Semiconductor |
MOSFET -30V Dual |
Data Sheet |
Negotiable |
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