Product Summary
The FDB7030BL is a MOSFET. It is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDB7030BL includes an integrated Schottky diode using Fairchilds monolithic SyncFET technology.
Parametrics
FDB7030BL absolute maximum ratings: (1)Drain-Source Voltage: 30 V; (2)Gate-Source Voltage: ±20 V; (3)Drain Current – Continuous (Note 1): 56 A; (4)Drain Current – Pulsed (Note 1): 160 A; (5)Total Power Dissipation @ TC = 25°C: 65 W; (6)Derate above 25°C: 0.43 W/°C; (7)Operating and Storage Junction Temperature Range: –65 to +100 °C; (8)Maximum lead temperature for soldering purposes, 1/8”from case for 5 seconds: 275 °C.
Features
FDB7030BL features: (1)56 A, 30 V RDS(ON)= 10.5 mW @ VGS = 10 V; (2)56 A, 30 V RDS(ON)= 16.5 mW @ VGS = 4.5 V; (3)Includes SyncFET Schottky body diode; (4)Low gate charge (15nC typical); (5)High performance trench technology for extremely low RDS(ON)and fast switching; (6)High power and current handling capability.
Diagrams

| Image | Part No | Mfg | Description | ![]() |
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![]() FDB7030BL |
![]() Fairchild Semiconductor |
![]() MOSFET N-Ch PowerTrench Logic Level |
![]() Data Sheet |
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![]() FDB7030BL_Q |
![]() Fairchild Semiconductor |
![]() MOSFET N-Ch PowerTrench Logic Level |
![]() Data Sheet |
![]() Negotiable |
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![]() FDB7030BLS |
![]() Fairchild Semiconductor |
![]() MOSFET N-Ch PowerTrench Logic Level |
![]() Data Sheet |
![]() Negotiable |
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(China (Mainland))









