Product Summary

The MRF237 is a silicon NPN RF power transistor. It is designed for large signal power amplifier applications operating to 225 MHz.

Parametrics

MRF237 absolute maximum ratings: (1)IC: 1.0 A; (2)VCBO: 36 V; (3)VCEO: 18 V; (4)PDISS: 8.0 W @ TC = 25 ℃; (5)TJ: -65 ℃ to +200 ℃; (6)TSTG: -65 ℃ to +200 ℃; (7)θJC: 22 ℃/W.

Features

MRF237 features: (1)BVCEO: 18 V; (2)BVCES: 36 V; (3)BVEBO: 4.0 V; (4)ICBO: 0.25 mA; (5)hFE: 5.0; (6)COB: 15 to 20 pF; (7)GPE: 12 to 14dB; (8)η: 50% to 62%.

Diagrams

MRF237 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MRF237
MRF237

Other


Data Sheet

Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MRF20030
MRF20030

Other


Data Sheet

Negotiable 
MRF20030R
MRF20030R

Other


Data Sheet

Negotiable 
MRF20060
MRF20060

Other


Data Sheet

Negotiable 
MRF20060_1248487
MRF20060_1248487

Other


Data Sheet

Negotiable 
MRF20060R
MRF20060R

Other


Data Sheet

Negotiable 
MRF20060RS
MRF20060RS

Other


Data Sheet

Negotiable