(China (Mainland))
Product Summary
The EM637327Q-6 SGRAM is a high-speed CMOS synchronous graphics DRAM containing 32 Mbits. It is internally configured as a dual 512K x 32 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 32 bit banks is organized as 2048 rows by 256 columns by 32 bits. Read and write accesses to the SGRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.
Parametrics
EM637327Q-6 absolute maximum ratings: (1)Input, Output Voltage: - 0.3~VDD + 0.3 V; (2)Power Supply Voltage: - 0.3~4.6 V; (3)Operating Temperature: 0~70 °C; (4)Storage Temperature: - 55~150 °C; (5)Soldering Temperature (10s): 260 °C; (6)Power Dissipation: W; (7)Short Circuit Output Current: 50 mA.
Features
EM637327Q-6 features: (1)Fast access time from clock: 4.5/5.5/5.5/6 ns; (2)Fast clock rate: 200/166/143/125 MHz; (3)Fully synchronous operation; (4)Internal pipelined architecture; (5)Dual internal banks (512K x 32bit x 2bank); (6)Burst stop function; (7)Individual byte controlled by DQM0-3; (8)Block write and write-per-bit capability; (9)Auto Refresh and Self Refresh; (10)2048 refresh cycles/32ms; (11)Single +3.3V ± 0.3V power supply; (12)Interface: LVTTL.
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