BSH112

BSH112, N-channel enhancement mode field-effect transistor, 60 V, 300 mA, 10.83 W, SOT

Rated 5 Rating 5 | reviews | Write a review

Price:: US $0.02~0.02 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 10000 :	0.02 / Piece

PartNumber:: BSH112

Brand:: Philips Electronics India Limited - PHILIPS | Pack: | D/C: 06+

Availability:: Supply Ability: 100/Month Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

Place Order via Escrow Service

Not exactly what you want? Post a quick Buying Request!

Sold By

Ms. Sukey's store

(China (Mainland))

100% Positive feedback

Detailed seller ratings

Visit Store

Contact Now

Esrcow Service

Place orders confidently and securely via it

Safe payments
Quick and easy transactions
Free service charges

Learn More >>

Previous Next

Products Upload time: 2013-07-11

From Other Seller

Part Number:BSH112
US $0.02 - 0.02
Quantity:

piece

Product Summary

The BSH112 is an N-channel enhancement mode field-effect transistor. Applications are (1)Relay driver; (2)High speed line driver; (3)Logic level translator.

Parametrics

BSH112 absolute maximum ratings: (1)Drain-source voltage (DC): 60 V; (2)Drain-gate voltage (DC): 60 V; (3)Gate-source voltage (DC): ±15 V; (4)Drain current (DC)Tsp = 25 °C; VGS = 10 V; Figure 2 and 3: 300 mA; (5)Drain current (DC)Tsp = 100 °C; VGS = 10 V; Figure 2: 190 mA; (6)Peak drain current Tsp = 25 °C; pulsed; tp ≤ 10 ms; Figure 3: 1.2 A; (7)Total power dissipation Tsp = 25 °C; Figure 10.83 W; (8)Storage temperature: -65 +150 °C; (9)Operating junction temperature: -65 +150 °C.

Features

BSH112 features: (1)TrenchMOS technology; (2)Very fast switching; (3)Logic level compatible; (4)Subminiature surface mount package; (5)Gate-source ESD protectiodiodes.