(China (Mainland))
Product Summary
The AS4C256K16EO-45TC is a high performance 4 megabit CMOS Dynamic Random Access Memory (DRAM) organized as 262,144 words by 16 bits. The AS4C256K16EO-45TC is fabricated with advanced CMOS technology and designed with innovative design techniques resulting in high speed, extremely low power and wide operating margins at component and system levels. The AS4C256K16EO-45TC features a high speed page mode operation in which high speed read, write and read-write are performed on any of the 512 * 16 bits defined by the column address. The asynchronous column address uses an extremely short row address capture time to ease the system level timing constraints associated with multiplexed addressing. Very fast CAS to output access time eases system design.
Parametrics
AS4C256K16EO-45TC absolute maximum ratings: (1)Input voltage:-1.0V to +7.0V; (2)Output voltage:-1.0V to +7.0V; (3)Power supply voltage:-1.0V to +7.0V; (4)Operating temperature:0℃ to +70℃; (5)Storage temperature (plastic):-55℃ to +150℃; (6)Soldering temperature* time:260*10℃*sec; (7)Power dissipation:1W; (8)Short circuit output current:50mA; (9)Latch-up current:200mA.
Features
AS4C256K16EO-45TC features: (1)Organization: 262,144 words * 16 bits; (2)High speed: 30/35/50 ns RAS access time, 16/18/25 ns column address access time, 7/10/10/10 ns CAS access time; (3)EDO page mode; (4)Refresh: 512 refresh cycles, 8 ms refresh interval, RAS-only or CAS-before-RAS refresh or self-refresh, Self-refresh option is available for new generation device only; (5)Read-modify-write; (6)TTL-compatible, three-state I/O; (7)JEDEC standard packages: 400 mil, 40-pin SOJ, 400 mil, 40/44-pin TSOP II; (8)5V power supply; (9)Latch-up current ＞200 mA.
Diagrams
