Product Summary

The AP4800M is an N-channel enhancement mode power MOSFET. The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Parametrics

AP4800M absolute maximum ratings: (1)Drain-Source Voltage: 25 V; (2)Gate-Source Voltage: ±20 V; (3)Continuous Drain Current: 9 A; (4)Continuous Drain Current: 7 A; (5)Pulsed Drain Current: 40 A; (6)Total Power Dissipation: 2.5 W; (7)Linear Derating Factor: 0.02 W/℃; (8)Storage Temperature Range: -55 to 150 ℃; (9)Operating Junction Temperature Range: -55 to 150 ℃.

Features

AP4800M features: (1)Low On-Resistance; (2)Fast Switching; (3)Simple Drive Requirement.

Diagrams

AP4800M pin connection