(China (Mainland))
Product Summary
The an5833sa-e1v fifth Generation HEXFET from International Rectifier utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFET an5833sa-e1v is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package of the an5833sa-e1v is preferred for commercialindustrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.
Parametrics
an5833sa-e1v absolute maximum ratings: (1)ID @ TC = 25℃ at Continuous Drain Current, VGS @ 10V: 42A max; (2)ID @ TC = 100℃ at Continuous Drain Current, VGS @ 10V: 30 A max; (3)IDM, Pulsed Drain Current:140A max; (4)PD @TC = 25℃, Power Dissipation: 160 W; (5)Linear Derating Factor: 1.1 W/℃; (6)VGS, Gate-to-Source Voltage: ± 20 V; (7)EAS, Single Pulse Avalanche Energy: 420 mJ; (8)IAR, Avalanche Current: 22 A; (9)EAR, Repetitive Avalanche Energy: 16 mJ; (10)dv/dt, Peak Diode Recovery dv/dt: 5.0 V/ns; (11)TJ Operating Junction and TSTG Storage Temperature Range: -55 to + 175℃; (12)Soldering Temperature, for 10 seconds: 300 (1.6mm from case )℃; (13)Mounting torque, 6-32 or M3 srew: 10 lbf.in (1.1N.m)℃.
Features
an5833sa-e1v features: (1)Advanced Process Technology; (2)Dynamic dv/dt Rating; (3)175℃ Operating Temperature; (4)Fast Switching; (5)Fully Avalanche Rated.
Diagrams
