Product Summary

The V53C16128HT35T is a 131,072 x 16 bit highperformance CMOS dynamic random access memory. The V53C16128HT35T offers Page mode with Extended Data Output. EDO Page Mode operation allows random access up to 256 x 16 bits, within a page, with cycle times as short as 12ns. All inputs are TTL compatible. The V53C16128HT35T is best suited for graphics, and DSP applications requiring high performance memories.

Parametrics

V53C16128HT35T absolute maximum ratings: (1)Ambient Temperature Under Bias: –10 °C to +80 °C; (2)Storage Temperature (plastic): –55 °C to +125 °C; (3)Voltage Relative to VSS : –1.0 V to +7.0 V; (4)Data Output Current : 50 mA; (5)Power Dissipation: 1.0w.

Features

V53C16128HT35T features: (1)128K x 16-bit organizatio; (2)EDO Page Mode for a sustained data rate of 83 MHz; (3)RAS access time: 30, 35, 40, 45, 50 ns; (4)Dual CAS Input; (5)Low power dissipatio; (6)Read-Modify-Write, RAS-Only Refresh, CAS-Before-RAS Refresh; (7)Refresh Interval: 512 cycles/8 ms; (8)Available i40-pi400 mil SOJ and 40/44L-pi400 mil TSOP-II packages; (9)Single +5V ±10% Power Supply; (10)TTL Interface.

Diagrams

V53C16128HT35T pin connection