(China (Mainland))
Product Summary
The TPS1110DR is a single, low-rDS(on), P-channel enhancement-mode power MOS transistor. The TPS1110DR features extremely low-rDS(on) values coupled with logic-level gate-drive capability and very low drain-source leakage current. With a maximum VGS(th) of –0.9 V and an IDSS of only –100 nA, the TPS1110DR is the ideal high-side switch for low-voltage, portable battery-management power-distribution systems where maximizing battery life is an important concern. The thermal performance of the 8-pin small-outline (D) package has been greatly enhanced over the standard 8-pin SOIC, further making the TPS1110DR ideally suited for many power applications.
Parametrics
TPS1110DR absolute maximum ratings: (1)Drain-to-source voltage, VDS: –7 V; (2)Gate-to-source voltage, VGS: ±7 V; (3)Pulse drain current, ID TA = 25°C: 24 A; (4)Continuous source current (diode conduction), IS TA = 25°C: 6 A; (5)Continuous total power dissipation TP = 25°C: 4 W; (6)Junction-to-pin thermal resistance (qJP): 31 °C/W; (7)Continuous total power dissipation TA = 25°C: 1.25 W; (8)Junction-to-ambient thermal resistance (qJA): 100 °C/W; (9)Storage temperature range, Tstg: –65 to 150 °C; (10)Operating junction temperature range, TJ: –40 to 150 °C; (11)Lead temperature 1,6 mm (1/16 inch)from case for 10 seconds: 260 °C.
Features
TPS1110DR features: (1)Low rDS(on). 65 mW Typ at VGS = –4.5 V; (2)High Current Capability 6 A at VGS = –4.5 V; (3)Logic-Level Gate Drive (3 V Compatible)VGS(th)= –0.9 V Max; (4)Low Drain-Source Leakage Current <100 nA From 25°C to 75°C at VDS = –6 V; (5)Fast Switching: 5.8 ns Typ td(on); (6)Small-Outline Surface-Mount Power Package.
Diagrams
