Product Summary
The is MJD50 an NPN silicon power transistor. The MJD50 is designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications.
Parametrics
MJD50 absolute maximum ratings: (1)VCEO: 400V; (2)VCB: 350V; (3)VEB: 5V; (4)IC: 2A; (5)IB: 0.6A; (6)PD: 15W; (7)TJ, Tstg: -65 to 150°C.
Features
MJD50 features: (1)Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); (2)Straight Lead Version in Plastic Sleeves (–1 Suffix); (3)Lead Formed Version in 16 mm Tape and Reel (T4 Suffix); (4)Electrically Similar to Popular TIP47, and TIP50; (5)250 and 400 V (Min)— VCEO(sus); (6)1 A Rated Collector Current.
Diagrams

| Image | Part No | Mfg | Description | ![]() |
Pricing (USD) |
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![]() MJD50TF |
![]() Fairchild Semiconductor |
![]() Transistors Bipolar (BJT) NPN Epitaxial Sil |
![]() Data Sheet |
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![]() |
![]() MJD50T4G |
![]() ON Semiconductor |
![]() Transistors Bipolar (BJT) 1A 400V 15W NPN |
![]() Data Sheet |
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![]() |
![]() MJD50T4 |
![]() STMicroelectronics |
![]() Transistors Bipolar (BJT) NPN Hi-Volt Fast Sw |
![]() Data Sheet |
![]() Negotiable |
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![]() MJD50G |
![]() ON Semiconductor |
![]() Transistors Bipolar (BJT) 1A 400V 15W NPN |
![]() Data Sheet |
![]()
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![]() |
![]() MJD50 |
![]() ON Semiconductor |
![]() Transistors Bipolar (BJT) 1A 400V 15W NPN |
![]() Data Sheet |
![]() Negotiable |
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(China (Mainland))









