(China (Mainland))
Product Summary
The M29W160ET70N6F is a 16 Mbit (2Mb x8 or 1Mb x16) non-volatile memory that can be read, erased and reprogrammed. The M29W160ET70N6F operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.
Parametrics
M29W160ET70N6F absolute maximum ratings: (1)Temperature Under Bias: –50 to 125 °C; (2)Storage Temperature: –65 to 150 °C; (3)Input or Output Voltage (1,2): –0.6 to VCC +0.6 V; (4)Supply Voltage: –0.6 to 4 V; (5)Identification Voltage: –0.6 to 13.5 V.
Features
M29W160ET70N6F features: (1)Supply voltage: VCC = 2.7V to 3.6V for Program, Erase and Read; (2)Access times: 70, 90ns; (3)Programming time: 10μs per Byte/Word typical; (4)35 memory blocks: 1 boot block (Top or Bottom Location); 2 Parameter and 32 Main Blocks; (5)Program/erase controller: Embedded Byte/Word Program algorithms; (6)Erase suspend and resume modes: Read and Program another Block during Erase Suspend; (7)Unlock bypass program command: Faster Production/Batch Programming.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 M29W160ET70N6F |
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Flash STD FLASH 16 MEG |
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Negotiable |
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