(China (Mainland))
Product Summary
The IRF3205N is a Power MOSFET. It utilizes advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that IRF3205N is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Parametrics
IRF3205N absolute maximum ratings: (1)ID @ TC = 25℃, Continuous Drain Current, VGS @ 10V: 110A; (2)ID @ TC = 100℃, Continuous Drain Current, VGS @ 10V: 80 A; (3)IDM ,Pulsed Drain Current: 390A; (4)PD @TC = 25℃, Power Dissipation: 200 W; (5)Linear Derating Factor: 1.3 W/℃; (6)VGS, Gate-to-Source Voltage: ± 20 V; (7)IAR, Avalanche Current: 62 A; (8)EAR, Repetitive Avalanche Energy: 20 mJ; (9)dv/dt, Peak Diode Recovery dv/dt: 5.0 V/ns; (10)TJ, TSTG, Operating Junction and Storage Temperature Range: -55 to + 175℃; (11)Soldering Temperature, for 10 seconds: 300 (1.6mm from case )℃; (12)Mounting torque, 6-32 or M3 srew: 10 lbf.in (1.1N.m).
Features
IRF3205N features: (1)Advanced Process Technology; (2)Ultra Low On-Resistance; (3)Dynamic dv/dt Rating; (4)175℃ Operating Temperature; (5)Fast Switching; (6)Fully Avalanche Rated.
Diagrams
