IR2151STR

IR2151STR, power MOSFET and IGBT driver, 25mA, 625V, 1.0W, SOP

Rated 5 Rating 5 | reviews | Write a review

Price:: US $1.00~1.00 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 2500 :	1.00 / Piece

PartNumber:: IR2151STR

Brand:: International Rectifier - IR | Pack: SOP | D/C: 05+

Availability:: Supply Ability: 4/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

Place Order via Escrow Service

Not exactly what you want? Post a quick Buying Request!

Sold By

Ms. Sukey's store

(China (Mainland))

100% Positive feedback

Detailed seller ratings

Visit Store

Contact Now

Esrcow Service

Place orders confidently and securely via it

Safe payments
Quick and easy transactions
Free service charges

Learn More >>

Previous Next

Products Upload time: 2013-06-24

From Other Seller

Part Number:IR2151STR
US $1.00 - 1.00
Quantity:

piece

Product Summary

The IR2151STR is a high voltage, high speed, self-oscillating power MOSFET and IGBT driver with both high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The IR2151STR features a programmable oscillator which is similar to the 555 timer. The IR2151STR features a high pulse current buffer stage and an internal deadtime designed for minimum driver cross-conduction.

Parametrics

IR2151STR absolute maximum ratings: (1)VB High Side Floating Supply Voltage: -0.3 to 625V; (2)VS High Side Floating Supply Offset Voltage: VB - 25 to VB + 0.3V; (3)VHO High Side Floating Output Voltage: VS - 0.3 to VB + 0.3V; (4)ICC Supply Current: 25mA; (5)IRT RT Output Current: -5 to 5mA; (6)dVs/dt Allowable Offset Supply Voltage Transient: 50 V/ns; (7)PD Package Power Dissipation @ TA≦+25°C (8 Lead DIP): 1.0W, (8 Lead SOIC): 0.625W; (8)TJ Junction Temperature: 150°C; (9)TS Storage Temperature: -55 to 150 °C; (10)TL Lead Temperature (Soldering, 10 seconds): 300°C.

Features

IR2151STR features: (1)Floating channel designed for bootstrap operation; (2)Undervoltage lockout; (3)Programmable oscillator frequency; (4)Matched propagatiodelay for both channels; (5)Low side output iphase with RT.