Product Summary
The IR21365 is a high votage, high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels for 3-phase applications. Proprietary HVIC technology of the IR21365 enables ruggedized monolithic construction. Logic inputs are compatible with CMOS or LSTTL outputs, down to 3.3V logic. A current trip function which terminates all six outputs can be derived from an external current sense resistor. An enable function is available to terminate all six outputs simultaneously. An open-drain FAULT signal is provided to indicate that an overcurrent or undervoltage shutdown has occurred.
Parametrics
IR21365 absolute maximum ratings: (1)VS High side offset voltage VB1,2,3 - 25 to VB1,2,3 + 0.3; (2)PD Package power dissipation @ TA ≤ +25°C (28 lead PDIP): 1.5W, (28 lead SOIC): 1.6W, (44leadPLCC): 2.0W; (3)TJ Junction temperature: 150°C; (4)TS Storage temperature: -55 to 150°C; (5)TL Lead temperature (soldering, 10 seconds): 300°C; (6)IQCC Quiescent VCC supply current: 1.6 to 2.3 mA.
Features
IR21365 features: (1)Undervoltage lockout for all channels; (2)Over-current shutdown turns off all six drivers; (3)Independent 3 half-bridge drivers; (4)Matched propagation delay for all channels; (5)Cross-conduction prevention logic; (6)3.3V logic compatible; (7)Lower di/dt gate driver for better noise immunity; (8)Externally programmable delay for automatic fault clear; (9)Also available LEAD-FREE.
Diagrams

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![]() IR21365JTRPBF |
![]() International Rectifier |
![]() Power Driver ICs 3Phs Drvr Sft Trn On Invrt 200ns |
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![]() IR21365STRPBF |
![]() International Rectifier |
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![]() IR21365SPbF |
![]() International Rectifier |
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![]() IR21365 |
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![]() Negotiable |
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(China (Mainland))










