IR2125S

IR2125S, MOSFET and IGBT driver, 525V, 1.0W, SOP

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Price:: US $1.00~1.00 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 10000 :	1.00 / Piece
1 ~ 9 :	13.20 / Piece
10 ~ 100 :	12.50 / Piece

PartNumber:: IR2125S

Brand:: International Rectifier - IR | Pack: SOP | D/C: 07+

Availability:: Supply Ability: 4/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-06-21

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Part Number:IR2125S
US $1.00 - 1.00
Quantity:

piece

Product Summary

The IR2125S is a high voltage, high speed power MOSFET and IGBT driver with over-current limiting protection circuitry. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The IR2125S features a high pulse current buffer stage designed for minimum driver cross-conduction. The protection circuitry detects over-current in the driven power transistor and limits the gate drive voltage. The floating channel of the IR2125S can be used to drive an N-channel power MOSFET or IGBT in the high or low side configuration which operates up to 500 volts.

Parametrics

IR2125S absolute maximum ratings: (1)High Side Floating Supply Voltage:-0.3V to 525V; (2)High Side Floating Offset Voltage:VB - 25V to VB + 0.3V; (3)High Side Floating Output Voltage:VS - 0.3V to VB + 0.3V; (4)Logic Supply Voltage:-0.3V to 25V; (5)Logic Input Voltage:-0.3V to VCC + 0.3V; (6)Error Signal Voltage:-0.3V to VCC + 0.3V; (7)Current Sense Voltage:VS - 0.3V to VB + 0.3V; (8)Allowable Offset Supply Voltage Transient:50V/ns; (9)Package Power Dissipation @ TA ≤ +25℃:1.0W; (10)Thermal Resistance, Junction to Ambient:125℃/W; (11)Junction Temperature:150℃; (12)Storage T emperature:-55℃ to 150℃; (13)Lead Temperature (Soldering, 10 seconds):300℃.

Features

IR2125S features:(1)Floating channel designed for bootstrap operation; (2)Fully operational to +500V; (3)Tolerant to negative transient voltage; (4)dV/dt immune; (5)Gate drive supply range from 12 to 18V; (6)Undervoltage lockout; (7)Current detection and limiting loop to limit driven power transistor current; (8)Error lead indicates fault conditions and programs shutdown time; (9)Output in phase with input.