FDFS2P753Z

FDFS2P753Z, MOSFET and schottky Diode, 30 V, 3 A, 1.6 W, 580 mV, SOP

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Price:: US $1.00~1.00 / piece [Get Latest Price]

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PartNumber:: FDFS2P753Z

Brand:: Fairchild Semiconductor - Fairchild | Pack: SOP | D/C: 07+

Availability:: Supply Ability: 4/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2013-06-17

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Part Number:FDFS2P753Z
US $1.00 - 1.00
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Product Summary

The FDFS2P753Z is an integrated P-channel powertrench MOSFET and schottky Diode. It combines the exceptional performance of Fairchild PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package. The FDFS2P753Z is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on-state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Application is DC - DC conversion.

Parametrics

FDFS2P753Z absolute maximum ratings: (1)Drain to Source Voltage: -30 V; (2)Gate to Source Voltage: ±25 V; (3)Drain Current -Continuous (Note 1a): -3 A; (4)Drain Current -Pulsed: -16 A; (5)Power Dissipation (Note 1a): 1.6 W; (6)Single Pulse Avalanche Energy (Note 2): 6 mJ; (7)Schotty Repetitive Peak Reverse Voltage: -20 V; (8)Schotty Average Forward Current (Note 1a): -2 A; (9)Operating and Storage Junction Temperature Range: -55 to +150 °C.

Features

FDFS2P753Z features: (1)Max rDS(on)= 115mΩ at VGS = -10V, ID = -3.0A; (2)Max rDS(on)= 180mΩ at VGS = -4.5V, ID = -1.5A; (3)VF < 500mV @ 1A; VF < 580mV @ 2A; (4)Schottky and MOSFET incorporated into single power surface mount SO-8 package; (5)Electrically independent Schottky and MOSFET pinout for design flexibility; (6)RoHS Compliant.