(China (Mainland))
Product Summary
The EDR2518ABSE-8C-E is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
Parametrics
EDR2518ABSE-8C-E absolute maximum ratings: (1)Junction temperature under bias: 100 °C; (2)VDD, VDDa Supply voltage: 2.50 – 0.13 to 2.50 + 0.13 V; (3)Supply voltage for CMOS pins (2.5V controllers): 2.50 – 0.13 to 2.50 + 0.25 V; (4)Supply voltage for CMOS pins (1.8V controllers): 1.80 – 0.1 to 1.80 + 0.2 V; (5)VTERM Termination voltage: 1.80 – 0.1 to 1.80 + 0.1 V; (6)VREF Reference voltage: 1.40 – 0.2 to 1.40 + 0.2 V.
Features
EDR2518ABSE-8C-E features: (1)2.1 GB/s sustained data transfer rate; (2)Separate control and data buses for maximized efficiency; (3)Separate row and column control buses for easy scheduling and highest performance; (4)32 banks: four transactions can take place simultaneously at full bandwidth data rates Write buffer to reduce read latency; (5)3 precharge mechanisms for controller flexibility; (6)Interleaved transactions.
Diagrams
