Product Summary
The CY7C271-55WMB is a high-performance 32,768-word by 8-bit CMOS PROM. When disabled (CE HIGH), the CY7C271-55WMB automatically powers down into a low-power stand-by mode. The CY7C271-55WMB is packaged in the 300-mil slim package. Both the CY7C271-55WMB is an available in a cerDIP package equipped with an erasure window to provide for reprogrammability. When exposed to UV light, the PROM is erased and can be reprogrammed. The memory cells utilize proven EPROM floating gate technology and byte-wide intelligent programming algorithm.
Parametrics
CY7C271-55WMB absolute maximum ratings: (1)Storage Temperature : −65°C to +150°C; (2)Ambient Temperature with Power Applied: −55°C to +125°C; (3)Supply Voltage to Ground Potential: −0.5V to +7.0V; (4)DC Voltage Applied to Outputs in High Z State: −0.5V to +7.0V; (5)DC Input Voltage: −3.0V to +7.0V; (6)Latch-Up Current: >200 mA.
Features
CY7C271-55WMB features: (1)CMOS for optimum speed/power; (2)Windowed for reprogrammability; (3)Super low standby power: Less than 165 mW when deselected; (4)EPROM technology 100% programmable; (5)Slim 300-mil package (7C271); (6)Direct replacement for bipolar PROM; (7)Capable of withstanding >2001V static discharge.
Diagrams

(China (Mainland))






