2SK2009

field effect transistor, 200mA, 30V, 200mW, BGA

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Price:: US $0.04~0.04 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 2750 :	0.04 / Piece

PartNumber:: 2SK2009

Brand:: Toshiba Semiconductor - TOSHIBA | Pack: BGA | D/C: 00+

Availability:: Supply Ability: 2750/Month Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-07-15

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Part Number:2SK2009
US $0.04 - 0.04
Quantity:

piece

Product Summary

The 2sk2009 is a Toshiba field effect transistor. Applications of the 2sk2009 include: high speed switching and analog switch.

Parametrics

2sk2009 maximum ratings: (1) Drain-source voltage VDS: 30V; (2) Gate-source voltage VGSS: ±20V; (3) DC drain current ID: 200mA; (4) Drain power dissipation PD: 200mW; (5) Channel temperature Tch: 150°C; (6) Storage temperature range Tstg: -55 to 150°C.

Features

2sk2009 features: (1) High input impedance; (2) Low gate threshold voltage: Vth= 0.5~1.5 V; (3) Excellent switching times: ton= 0.06μs (typ.) , toff= 0.12μs (typ.) ; (4) Low drain-source ON resistance: RDS= 1.2Ω(typ.) ; (5) Small package; (6) Enhancement-mode.