Product Summary
The 2SC6090 is an NPN triple diffused planar silicon transistor. The 2SC6090 is ideal for color TV horizontal deflection output applications.
Parametrics
2SC6090 absolute maximum ratings: (1)Collector-to-Base Voltage VCBO: 1500 V; (2)Collector-to-Emitter Voltage VCEO: 700 V; (3)Emitter-to-Base Voltage VEBO: 5 V; (4)Collector Current IC: 10 A; (5)Collector Current (Pulse)ICP: 25 A; (6)Collector Dissipation PC 2.0 W, Tc=25°C: 35 W; (7)Junction Temperature Tj: 150 °C; (8)Storage Temperature Tstg: -55 to +150 °C.
Features
2SC6090 features: (1)High speed; (2)High breakdown voltage (VCBO=1500V); (3)Adoption of high reliability HVP process; (4)Adoption of MBIT process.
Diagrams

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![]() 2SC6090LS |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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| Image | Part No | Mfg | Description | ![]() |
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![]() 2SC6017-E |
![]() ON Semiconductor |
![]() Transistors Bipolar (BJT) BIP NPN 10A 50V |
![]() Data Sheet |
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![]() 2SC6026CT-Y(TPL3) |
![]() Toshiba |
![]() Transistors Bipolar (BJT) 100mA 50V |
![]() Data Sheet |
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![]() 2SC6043 |
![]() ON Semiconductor |
![]() Transistors Bipolar (BJT) BIP NPN 2A 50V |
![]() Data Sheet |
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![]() 2SC6098-TL-E |
![]() ON Semiconductor |
![]() Transistors Bipolar (BJT) BIP NPN 2.5A 80V |
![]() Data Sheet |
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![]() |
![]() 2SC6098-E |
![]() ON Semiconductor |
![]() Transistors Bipolar (BJT) BIP NPN 2.5A 80V |
![]() Data Sheet |
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![]() 2SC6087 |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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(China (Mainland))












