(China (Mainland))
Product Summary
The tpcp8402 is a TOSHIBA Field Effect Transistor. The applications of the tpcp8402 include Portable Equipment, Mortor Drive and DC-DC Converter.
Parametrics
tpcp8402 absolute maximum ratings: (1)Drain-source voltage: 30 V; (2)Drain-gate voltage: 30 V; (3)Gate-source voltage: ±20 V; (4)Drain current: 4.2 A; (5)Drain power dissipation: 1.48 W; (6)Single pulse avalanche energy: 2.86 mJ; (7)Channel temperature: 150 ℃; (8)Storage temperature range: -55 to 150 ℃.
Features
tpcp8402 features: (1)Low drain-source ON resistance: P Channel RDS (ON) = 60 mΩ(typ.); (2)N Channel RDS (ON) = 38 mΩ(typ.); (3)High forward transfer admittance: P Channel |Yfs| = 6.0 S (typ.); (4)N Channel |Yfs| = 7.0 S (typ.); (5)Low leakage current: P Channel IDSS = -10 μA (VDS = -30 V); (6)N Channel IDSS = 10 μA (VDS = 30 V); (7)Enhancement.mode: P Channel Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1mA); (8)N Channel Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1mA).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 TPCP8402(TE85L,F) |
Toshiba |
MOSFET N-Ch P-Ch 30V 4.2A -30V -3.4A |
Data Sheet |
Negotiable |
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 |
TPCP8402(TE85L,F,M |
Toshiba |
MOSFET MOSFET N-Ch P-Ch 30V 4.2 3.4A |
Data Sheet |
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TPCP8402 |
Other |
|
Data Sheet |
Negotiable |
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