TPCF8001

tpcf8001, silicon p-channel mos type (u-mos iv) field effect transistor, 1.35 w, 20 kω, 0.11 mj, smd

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Price:: US $0.08~0.08 / piece [Get Latest Price]

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Qty (lots)	Price/lot
1 ~ 4000 :	0.08 / Piece

PartNumber:: TPCF8001

Brand:: Toshiba Semiconductor - Toshiba | D/C: 05+

Availability:: Supply Ability: 4000/Month Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-07-25

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Part Number:TPCF8001
US $0.08 - 0.08
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Product Summary

The tpcf8001 is a silicon p-channel mos type (u-mos iv) field effect transistor.

Parametrics

tpcf8001 absolute maximum ratings: (1)Drain-source voltage VDSS: -30 V; (2)Drain-gate voltage (RGS = 20 kΩ)VDGR: -30 V; (3)Gate-source voltage VGSS: ±20 V; (4)Drain current Pulse (Note 1)IDP: -12.8 A; (5)Drain power dissipation (t = 5 s)(Note 2a)Single-device operation PD (1): 1.35 W; (6)Single-device value at dual operation (Note 3b)PD (2): 1.12 W; (7)Single-device operation Drain power (Note 3a)PD (1): 0.53 W; (8)Single-device value at dual operation (Note 3b)PD (2): 0.33 W; (9)Single-pulse avalanche energy (Note 4)EAS: 0.67 mJ; (10)Avalanche current IAR: -1.6 A; (11)Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5)EAR: 0.11 mJ; (12)Channel temperature Tch: 150 °C; (13)Storage temperature range Tstg: -55~150 °C.

Features

tpcf8001 features: (1)Low drain-source ON resistance: RDS (ON)= 60 mΩ (typ.); (2)High forward transfer admittance: |Yfs| = 5.9 S (typ.); (3)Low leakage current: IDSS = -10 μA (max)(VDS = -30 V); (4)Enhancement model: Vth = -0.8 to -2.0 V, (VDS = -10 V, ID = -1 mA).