(China (Mainland))
Product Summary
The si9433bdy-t1-e3 is a P-Channel 20-V (D-S) MOSFET.
Parametrics
si9433bdy-t1-e3 absolute maxing ratings: (1)Drain-Source Voltage VDS: -20 V; (2)Gate-Source Voltage VGS: ±12 V; (3)Continuous Drain Current (TJ = 150℃) TA = 25℃ ID: ±5.4 A; (4)Pulsed Drain Current IDM: ±20 A; (5)Continuous Source Current (Diode Conduction) IS: -2.6 A; (6)Maximum Power Dissipation TA = 25℃ PD: 2.5 W; (7)Operating Junction and Storage Temperature Range TJ, Tstg: –55 to 150 ℃.
Features
si9433bdy-t1-e3 specifications: (1)Gate Threshold Voltage VGS(th): -0.8 V; (2)Gate-Body Leakage IGSS: ±100 nA; (3)Zero Gate Voltage Drain Current IDSS: -1 μA; (4)On-State Drain Current ID(on): -20 A; (5)Drain-Source On-State Resistance rDS(on): 0.032 to 0.045 Ω; (6)Forward Transconductance gfs: 15 S; (7)Diode Forward Voltage VSD: -0.76 to -1.2 V.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 SI9433BDY-T1-E3 |
Vishay/Siliconix |
MOSFET 20V 6.2A 0.04Ohm |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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SI9400DY |
Vishay/Siliconix |
MOSFET 20V 2.5A 2.5W |
Data Sheet |
Negotiable |
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SI9407AEY |
Vishay/Siliconix |
MOSFET 60V 3.5A 3W |
Data Sheet |
Negotiable |
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SI9407AEY-E3 |
Vishay/Siliconix |
MOSFET 60V 3.5A 3W |
Data Sheet |
Negotiable |
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SI9407AEY-T1 |
Vishay/Siliconix |
MOSFET 60V 3.5A 3W |
Data Sheet |
Negotiable |
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SI9407AEY-T1-E3 |
Vishay/Siliconix |
MOSFET 60V 3.5A 3W |
Data Sheet |
Negotiable |
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SI9407AEY-T1-GE3 |
Vishay/Siliconix |
MOSFET 60V 3.5A 3.0W 120mohm @ 10V |
Data Sheet |
Negotiable |
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